| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -300V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −300V |
| 集电极连续输出电流ICCollector Current(IC) | −500mA/-0.5A |
| 截止频率fTTranstion Frequency(fT) | 50MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 40 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率PcPoWer Dissipation | 350mW/0.35W |
| Description & Applications | PNP Silicon Transistor Descriptions • High voltage application • Telephone application Features • Collector-Emitter voltage • Complementary pair with SBT42 |
| 描述与应用 | PNP硅晶体管 简述 •高电压施加 •电话应用 特点 •集电极 - 发射极电压 •互补配对SBT42 |