| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | -6V |
| 最大漏极电流IdDrain Current | -370mA/-0.37A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 2.7Ω@ VGS = -1.8V, ID = -150mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.45V |
| 耗散功率PdPower Dissipation | 250mW/0.25W |
| Description & Applications | Dual P-Channel 20-V (D-S) MOSFET Feature Very Small Footprint High-Side Switching Low On-Resistance: 1.2 Low Threshold: 0.8 V (typ) Fast Switching Speed: 14 ns 1.8-V Operation Gate-Source ESD Protection Application Drivers: Relays, Solenoids, Lamps,Hammers, Displays, Memories Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers |
| 描述与应用 | 双P沟道20-V（D-S）的MOSFET 特点 非常小的足迹 高边开关 低导通电阻：1.2 低阈值：0.8 V（典型值） 快速开关速度：14纳秒 1.8-V操作 门源ESD保护 应用 驱动：继电器，螺线管，灯，锤子，显示器，记忆 电池供电系统 电源转换器电路 负载/功率开关手机，寻呼机 |