| 最大源漏极电压VdsDrain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | 305mA/0.305A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 1.4Ω@ VGS =10V, ID =500mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 1~2.5V |
| 耗散功率PdPower Dissipation | 250mW/0.25W |
| Description & Applications | N-Channel 60 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance • Low Threshold • Low Input Capacitance • Fast Switching Speed • Low Input and Output Leakage • ESD Protected • Miniature Package • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Drivers: Relays, Solenoids, Lamps, Hammers, Displays,Memories, Transistors, etc. • Battery Operated Systems • Solid-State Relays |
| 描述与应用 | N沟道60 V（D-S）的MOSFET 特点 •无卤素根据IEC 61249-2-21定义 •低导通电阻 •低门槛 •低输入电容 •开关速度快 •低输入和输出泄漏 •ESD保护 •微型包装 •符合RoHS指令2002/95/EC 应用 •驱动器：继电器，螺线管，灯，锤子，显示器，记忆，晶体管等。 •电池供电系统 •固态继电器 |