| 最大源漏极电压VdsDrain-Source Voltage | -12V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | -12V |
| 最大漏极电流IdDrain Current | -2.7A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 160mΩ@ VGS = -1.8V, ID = -1A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.45V |
| 耗散功率PdPower Dissipation | 1W |
| Description & Applications | P-Channel 12-V (D-S) MOSFET FEATURES Thermally Enhanced SC-70 Package ESD Protected: 3000 V APPLICATIONS Load Switching PA Switch Level Switch |
| 描述与应用 | P沟道12-V（D-S）的MOSFET 特点 耐热增强型SC-70封装 ESD保护：3000 V 应用 负载开关 PA开关 液位开关 |