| 最大源漏极电压VdsDrain-Source Voltage | 20V/-20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 12V/12V |
| 最大漏极电流IdDrain Current | 660mA/-410mA |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 630mΩ@ VGS =2.5V, ID =400mA/1.8Ω@ VGS =-2.5V, ID =-250mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.6V/-0.6V |
| 耗散功率PdPower Dissipation | 270mW/0.27W |
| Description & Applications | Complementary 2.5-V (G-S) MOSFET |
| 描述与应用 | 互补2.5-V（G-S）的MOSFET |