| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -80V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −80V |
| 集电极连续输出电流ICCollector Current(IC) | −500mA/-0.5A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -250mV/-0.25V |
| 耗散功率PcPoWer Dissipation | 330mW/0.33W |
| Description & Applications | PNP Silicon AF Transistor • Low collector-emitter saturation voltage • Complementary type: SMBTA06 • Pb-free • Qualified according AEC Q101 |
| 描述与应用 | PNP硅对焦晶体管 •低集电极 - 发射极饱和电压 •互补类型：SMBTA06 •无铅 •符合AEC Q101 |