| 逻辑类型Logic Type | 与非门 NAND Gate |
| 电路数Number of Circuits | 1 |
| 输入数Number of Inputs | 2 |
| 电源电压VccVoltage - Supply | 0.8v~2.7v |
| 静态电流IqCurrent - Quiescent (Max) | 10uA |
| 输出高，低电平电流Current - Output High, Low | -9mA,9mA |
| 低逻辑电平Logic Level - Low | 0.7v |
| 高逻辑电平Logic Level - High | 1.7V |
| 传播延迟时间@Vcc，CLMax Propagation Delay @ V, Max CL | 0.5nS @ 2.5v 30pF |
| Description & Applications | SINGLE 2-INPUT POSITIVE NAND GATE ; Available in the Texas Instruments • Low Power Consumption, 10-µA Max I CC NanoFree™ Package • ±8-mA Output Drive at 1.8 V • Optimized for 1.8-V Operation and Is 3.6-V I/O • Latch-Up Performance Exceeds 100mA Per Tolerant to Support Mixed-Mode Signal JESD 78, Class II • ESD Protection Exceeds JESD 22 Ioff Supports Partial-Power-Down Mode – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) • Sub 1-V Operable – 1000-V Charged-Device Model (C101) • Max t pd of 2.2 ns at 1.8 V |
| 描述与应用 | 单路2输入正与非门; 德州仪器低功耗，10μA最大I CC NanoFree™包装•±8 mA输出驱动在1.8 V •1.8-V操作优化，并为3.6-VI/ O•闭锁性能超过100mA每 耐支持混合模式信号JESD78，II类 •ESD保护超过JESD22 IOFF支持部分掉电模式 - 2000-V人体模型（A114-A） - 200-V机型号（A115-A） •子1-V可操作 - 1000-V带电器件模型（C101） •最大t PD为2.2 ns在1.8 V |