| 极性Polarization | 双向 Bidirectional |
| 反向关断电压/工作电压VRWMReverse Standoff Voltage | 5V |
| 反向击穿电压VBRBreakdown Voltage | 6V |
| 峰值脉冲耗散功率PPPMPeak Pulse Power Dissipation | 500W |
| 峰值脉冲电流IPPmPeak Forward Surge Current | 12A |
| 额定耗散功率PdPower dissipation | |
| Description & Applications | Features • Low Capacitance TVS Diode Array • ESD protection to IEC 61000-4-2, Level 4 • Array of surge rated diodes with internal TVS Diode • Protects two I/O lines • Low capacitance (<10pF) for high-speed interfaces • Low clamping voltage • Low operating voltage: 5.0V • Solid-state silicon-avalanche technology Applications • USB Power & Data Line Protection • Ethernet 10BaseT • Video Line Protection • T1/E1 secondary IC Side Protection • Portable Electronics • Microcontroller Input Protection • WAN/LAN Equipment • ISDN S/T Interface |
| 描述与应用 | 特点 •低电容TVS二极管阵列•IEC61000-4-2第4级ESD保护 •额定浪涌二极管阵列内部TVS二极管 •保护两个I / O线 •低电容（<10pF的）高速接口 •低钳位电压 •低工作电压：5.0V •固态硅雪崩技术 应用 •USB电源及数据线保护 •10BaseT以太网 •视频线路保护 •T1/E1次要的IC侧保护 •便携式电子产品 •微控制器输入保护 •广域网/局域网设备 •ISDN S/ T接口 |