| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -50V |
| 集电极连续输出电流IC Collector Current(IC) | -100mA/-0.1A |
| 基极输入电阻R1 Input Resistance(R1) | 10KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 0.21 |
| 直流电流增益hFE DC Current Gain(hFE) | |
| 截止频率fT Transtion Frequency(fT) | 200MHz |
| 耗散功率Pc Power Dissipation | 0.2W/200mW |
| Description & Applications | Features • PNP Silicon Transistor • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process • High packing density |
| 描述与应用 | 特点 •PNP硅晶体管 •借助内置的偏置电阻 •简化电路设计 •减少了部件数量和制造工艺 •高堆积密度 |