| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流ICCollector Current(IC) | 150mA/0.15A |
| 截止频率fTTranstion Frequency(fT) | 180MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 70~700 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 400mV/0.4V |
| 耗散功率PcPower Dissipation | 200mW/0.2W |
| Description & Applications | Features •NPN Silicon Transistor •Low collector saturation voltage VCE(sat)= Max. 0.4V •Low output capacitance Cob= Typ. 2pF •Complementary to the SSA1037 Descriptions •General small signal amplifier |
| 描述与应用 | 特点 •NPN硅晶体管 •低集电极饱和电压 VCE（sat）=最大。 0.4V •低输出电容 COB=典型2PF •互补的SSA1037 简述 •一般的小信号放大器 |