| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
| 最大漏极电流Id Drain Current | 100mA/0.1A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 4Ω/Ohm @2.5A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.7-1.3V |
| 耗散功率Pd Power Dissipation | 100mW/0.1W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • High input impedance • Low gate threshold voltage: Vth = 0.7~1.3 V • Small package |
| 描述与应用 | 东芝场效应晶体管的硅N沟道MOS类型 高速开关应用 模拟开关应用 高速开关应用 模拟开关应用 •2.5 V门极驱动 •高输入阻抗 •低栅极阈值电压VTH =0.7〜1.3 V •小型封装 |