| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 10V |
| 最大漏极电流IdDrain Current | -2.5A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 64mΩ@ VGS = -4.5V, ID = -1.5A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.5~-1.2V |
| 耗散功率PdPower Dissipation | 500mW/0.5W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ) ○ High Current Switching Applications • Compact package suitable for high-density mounting • Low on-resistance: Ron = 205mΩ (max) (@VGS = -2.0 V) Ron = 100mΩ (max) (@VGS = -2.5 V) Ron = 64mΩ (max) (@VGS = -4.5 V) |
| 描述与应用 | 东芝场效应晶体管硅P沟道MOS类型（U-MOSⅢ） ○高电流开关应用 •紧凑型封装，适用于高密度安装 •低导通电阻RON =205mΩ（最大）（@ VGS=-2.0 V） RON=100MΩ（最大）（@ VGS= -2.5 V） RON=64mΩ（最大）（@ VGS= -4.5 V） |