| 最大源漏极电压VdsDrain-Source Voltage | -12V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 8V |
| 最大漏极电流IdDrain Current | -4A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 54mΩ@ VGS = -2.5V, ID = -2A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.3~-1.0V |
| 耗散功率PdPower Dissipation | 500mW/0.5W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) High Current Switching Applications • Suitable for high-density mounting due to compact package • Low on-resistance: Ron = 54 mΩ (max) (@VGS = -2.5 V) 85 mΩ (max) (@VGS = -1.8 V) 150mΩ(max) (@VGS = -1.5 V) |
| 描述与应用 | 东芝场效应晶体管硅P沟道MOS类型（U-MOSⅣ） 高电流开关应用 •适用于高密度安装由于紧凑的封装 •低导通电阻RON =54MΩ（最大）（@ VGS=-2.5 V） 85毫欧（最大值）（@ VGS=-1.8 V） 150MΩ（最大）（@ VGS=-1.5 V） |