| 最大源漏极电压VdsDrain-Source Voltage | 30V/-30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V/20V |
| 最大漏极电流IdDrain Current | 400mA/-200mA |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 700mΩ@ VGS = 10V, ID = 200mA/ 2700mΩ@ VGS = -10V, ID =-100mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 1.1~1.8V/-1.1~-1.8V |
| 耗散功率PdPower Dissipation | 300mW/0.3W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type Power Management Switch High Speed Switching Applications Small package Low on resistance Q1: Ron = 0.7 Ω (max) (@VGS = 10 V) Q2: Ron = 2.7 Ω (max) (@VGS = −10 V) |
| 描述与应用 | 东芝场效应晶体管的硅N/ P沟道MOS类型 电源管理开关 高速开关应用 小型封装 低Q1阻力：RON =0.7Ω（最大）（@ VGS= 10 V） Q2：RON =2.7Ω（最大值）（@ VGS=-10 V） |