| 最大源漏极电压VdsDrain-Source Voltage | 20V/-20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 10V/10V |
| 最大漏极电流IdDrain Current | 100mA/-100mA |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 3Ω@ VGS = 4V, ID = 10mA/ 8Ω@ VGS = -4V, ID = -10mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.6~1.1V/-0.6~-1.1V |
| 耗散功率PdPower Dissipation | 150mW/0.15W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type High Speed Switching Applications Analog Switch Applications • Small package • Low on-resistance Q1: Ron = 4 Ω (max) (@VGS = 2.5 V) Q2: Ron = 12 Ω (max) (@VGS = −2.5 V) |
| 描述与应用 | 东芝场效应晶体管的硅P/ N沟道MOS类型 高速开关应用 模拟开关应用 •小型封装 •低导通电阻Q1：RON =4Ω（最大）（@ VGS=2.5 V） Q2：RON= 12Ω（最大）（@ VGS= -2.5 V） |