| 最大源漏极电压VdsDrain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 10V |
| 最大漏极电流IdDrain Current | 100mA/0.1A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 1200mΩ@ VGS = 2.5V, ID = 10mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.7~1.3V |
| 耗散功率PdPower Dissipation | 200mW/0.2W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switch Applications ●With built-in gate-source resistor: RGS = 1 MΩ (typ.) ●2.5 V gate drive ●Low gate threshold voltage: Vth = 0.7~1.3 V ●Small package |
| 描述与应用 | 东芝场效应晶体管的硅N沟道MOS类型 高速开关应用 ●借助内置的栅极 - 源极电阻器：RGS= 1MΩ（典型值） ●2.5 V门极驱动 ●低栅极阈值电压VTH =0.7〜1.3 V ●采用小型封装。 |