| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 12V |
| 最大漏极电流IdDrain Current | -200mA/-0.2A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 3300mΩ@ VGS = -4V, ID = -100mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.6~-1.1V |
| 耗散功率PdPower Dissipation | 300mW/0.3W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type ●Power Management Switch ●High Speed Switching Applications ●Small package ● Low on resistance : Ron = 3.3 Ω (max) (@VGS = −4 V) Ron = 4.0 Ω (max) (@VGS = −2.5 V) Low gate threshold voltage |
| 描述与应用 | 东芝场效应晶体管硅P沟道MOS类型 ●电源管理开关 ●高速开关应用 ●小型封装 ●低导通电阻RON =3.3Ω（最大）（@ VGS=-4 V） RON =4.0Ω（最大值）（@ VGS=-2.5 V） 低栅极阈值电压 |