| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 40V |
| 集电极连续输出电流ICCollector Current(IC) | 200mA/0.2A |
| 截止频率fTTranstion Frequency(fT) | 300MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~300 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 300mV/0.3V |
| 耗散功率PcPower Dissipation | 200mW/0.2W |
| Description & Applications | Features •NPN General Purpose Transistor •BVCEO > 40V (IC = 1mA) •Complements the UMT3906 / SST3906 / MMST3906 / 2N3906. |
| 描述与应用 | 特点 •NPN通用晶体管 •BVCEO>40V（IC=1MA） 补充UMT3906/ SST3906/ MMST3906/2N3906。 |