| 最大源漏极电压VdsDrain-Source Voltage | 30v |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -30v |
| 漏极电流(Vgs=0V)IDSSDrain Current | 5~15ma |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | -6v |
| 耗散功率PdPower Dissipation | 350mW/0.35W |
| Description & Applications | •N–Channel JFETs •Excellent High-Frequency Gain:400 MHz •Very Low Noise: 3 dB (typ) @400 MHz •Very Low Distortion •High AC/DC Switch Off-Isolation |
| 描述与应用 | •N沟道JFETs •优秀的高频增益：400兆赫 •非常低的噪音3分贝（典型值）@400 MHz的 •非常低的失真 •高AC / DC开关关断隔离 |