| 最大源漏极电压Vds Drain-Source Voltage | 13V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | |
| 最大漏极电流Id Drain Current | 30mA |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 8-14V |
| 耗散功率Pd Power Dissipation | 200mW/0.2W |
| Description & Applications | Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 |
| 描述与应用 | 硅N_Channel MOSFET四极管 •短沟道晶体管 与高S/ C质量的因素 •对于低噪声，增益控制 输入级到1 GHz •无铅（符合RoHS）包1） •符合AEC Q101 |