集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 30V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 20V |
集电极连续输出电流ICCollector Current(IC) | 20mA |
截止频率fTTranstion Frequency(fT) | 550MHz |
直流电流增益hFEDC Current Gain(hFE) | 120~240 |
管压降VCE(sat)Collector-Emitter Saturation Voltage | 300mV/0.3V |
耗散功率PcPower Dissipation | 150mW/0.15W |
Description & Applications | Description • RF amplifier Features • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain • Excellent noise response |
描述与应用 | 描述 •RF放大器 特点 •高电流转换频率 FT =550MHz的(典型值),VCE=6V,IE=1毫安] •低输出电容: COB=1.4pF(典型值)[VCB =6V,IE = 0] 基数较低的时间常数和高增益 •优异的噪声响应 |