| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 40V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 32V |
| 集电极连续输出电流ICCollector Current(IC) | 2A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~320 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率PcPower Dissipation | 2W |
| Description & Applications | Features •NPN Silicon Transistor •PC(Collector dissipation)=2W (Ceramic substate of 40×40×0.8mm used) •Low collector saturation voltage : VCE(sat)=0.5V(Typ.) •Complementary pair with STB1188 Descriptions •Medium power amplifier |
| 描述与应用 | 特点 •NPN硅晶体管 •PC（集电极耗散）=2W（40×40×0.8毫米的陶瓷子） •低集电极饱和电压VCE（星期六）= 0.5V（典型值） •互补配对STB1188 简述 •中等功率放大器 |