| 逻辑类型Logic Type | 与非门 NAND Gate |
| 电路数Number of Circuits | 1 |
| 输入数Number of Inputs | 2 |
| 电源电压VccVoltage - Supply | 1.8V~5.5V |
| 静态电流IqCurrent - Quiescent (Max) | 2μA |
| 输出高，低电平电流Current - Output High, Low | -32mA,32mA |
| 低逻辑电平Logic Level - Low | 0.25v~0.3v |
| 高逻辑电平Logic Level - High | 0.7v~0.75v |
| 传播延迟时间@Vcc，CLMax Propagation Delay @ V, Max CL | 4.3ns @ 4.5V~5.5V，15pF |
| Description & Applications | TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic.
* 2-Input NAND Gate .
* High output current : ±24 mA (min) at VCC = 3 V.
* Super high speed operation : tpd = 2.4 ns (typ.) at VCC = 5 V, 50 pF.
* Operating voltage range : VCC = 1.8 to 5.5 V .
* 5.5-V tolerant inputs .
* 5.5-V power down protection output .
* Matches the performance of TC74LCX series when operated at 3.3-V VCC. |
| 描述与应用 | 东芝CMOS数字集成电路硅单片。
*2输入与非门。
*高输出电流：±24 mA（分钟）在VCC= 3 V。
*超高速运转：：TPD =2.4纳秒（典型值）VCC= 5 V，50 pF的。
*工作电压范围：VCC=1.8至5.5 V。
*5.5-V宽容输入。
* 5.5-V断电保护输出。
*匹配时表现TC74LCX系列工作在3.3-V VCC。 |