| 最大源漏极电压VdsDrain-Source Voltage | 20V/20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 8V/-8V |
| 最大漏极电流IdDrain Current | 250mA/0.25A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 2Ω@ VGS = 4.5V, ID = 250mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.4V~1.5V |
| 耗散功率PdPower Dissipation | 200mW/0.2W |
| Description & Applications | N-Channel 20-V MOSFET FEATURES: Low On-Resistance: 2.0 Ω Low Threshold: 0.9 V (typ) Fast Switching Speed: 35 ns 2.5-V or Lower Operation BENEFITS: Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation APPLICATIONS: Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories Battery operated Systems Solid State Relay Load/Power Switching-Cell Phones, PDA |
| 描述与应用 | N沟道20-V MOSFET 特点： 低导通电阻：2.0Ω 低门槛：0.9 V（典型值） 开关速度快：35纳秒 2.5 V或更低的操作 优点： 易于驾驶开关 低失调电压（错误） 低电压工作 高速电路 低电池电压工作 应用： 驱动器：继电器，螺线管，灯， 锤，显示，记忆 电池供电系统 固态继电器 负载/功率开关手机，PDA |