| 最大源漏极电压VdsDrain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | 2.5A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 95mΩ@ VGS = 10V, ID = 1300mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 1.3~2.5V |
| 耗散功率PdPower Dissipation | 400mW/0.4W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) HDD Motor Drive Applications Notebook PC Applications Portable Equipment Applications ● Low drain-source ON resistance: RDS (ON) = 80 mΩ (typ.) ● High forward transfer admittance: |Yfs| = 3.8 S (typ.) ● Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) ● Enhancement-model: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) |
| 描述与应用 | 东芝场效应晶体管硅N沟道MOS类型（U-MOSII） 硬盘电机驱动应用 笔记本电脑应用 便携式设备的应用 ●低漏源导通电阻RDS（ON）= 80mΩ（典型值） ●高正向转移导纳：| YFS|= 3.8 S（典型值） ●低漏电流IDSS=10μA（最大）（VDS=30 V） ●增强模型：Vth =1.3到2.5 V（VDS=10V，ID= 1 mA时） |