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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
High-Efficiency DC/DC Converter Applications
Notebook PC Applications
Portable-Equipment Applications
• Small footprint due to small and thin package
• High-speed switching
• Small gate charge: QSW = 5.5 nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 16 mΩ (typ.)
• High forward transfer admittance: |Yfs| =14 S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
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