| 最大源漏极电压VdsDrain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 12V |
| 最大漏极电流IdDrain Current | 3A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 49mΩ@ VGS = 4.5V, ID = 1500mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.5~1.2V |
| 耗散功率PdPower Dissipation | 530mW/0.53W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) Notebook PC Applications Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: |Yfs| = 5.4 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) • Enhancement-mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 μA) |
| 描述与应用 | 东芝场效应晶体管的硅N沟道MOS型（U-MOS III） 笔记本电脑应用 便携式设备的应用 •低漏源导通电阻RDS（ON）=38mΩ（典型值） •高正向转移导纳：| YFS|= 5.4 S（典型值） •低漏电流IDSS= 10μA（最大）（VDS=20 V） •增强模式：Vth =0.5〜1.2 V （VDS=10V，ID=200μA） |