| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 45V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 45V |
| 集电极连续输出电流ICCollector Current(IC) | 3A |
| 截止频率fTTranstion Frequency(fT) | 150MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 500 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率PcPower Dissipation | 2W |
| Description & Applications | NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR * Very low equivalent on-resistance; RCE(sat) 125mΩ at 2A * Gain of 400 at IC=1 Amp * Very low saturation voltage APPLICATIONS * Darlington replacement * Siren Drivers, DC-DC converters |
| 描述与应用 | NPN硅平面中功率 高增益晶体管 *极低的等效导通电阻 * IC= 1放大器增益400 *极低的饱和电压应用 *达林顿更换 *警报器驱动器，DC-DC转换器 |