| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 基极输入电阻R1 Input Resistance(R1) | 47KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | |
| 电阻比(R1/R2) Resistance Ratio | |
| 直流电流增益hFE DC Current Gain(hFE) | 160 |
| 截止频率fT Transtion Frequency(fT) | 150MHz |
| 耗散功率Pc Power Dissipation | 0.1W/100mW |
| Description & Applications | Silicon NPN epitaxial planar transistr For digital circuits Features • Optimum for downsizing of the equipment and high-density mounting •Contribute for low power consumption |
| 描述与应用 | NPN硅外延平面晶体管 用于数字电路 特性 •最佳裁员的设备和高密度安装 •低功耗贡献 |