| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 20V |
| 集电极连续输出电流IC Collector Current(IC) | 700mA/0.7A |
| 基极输入电阻R1 Input Resistance(R1) | 1KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 0.021 |
| 直流电流增益hFE DC Current Gain(hFE) | 800 |
| 截止频率fT Transtion Frequency(fT) | 55MHz |
| 耗散功率Pc Power Dissipation | 1.0W |
| Description & Applications | Silicon NPN epitaxial planer transistor For amplification of the low frequency Features lHigh forward current transfer ratio hFE. Costs can be reduced through downsizing of the equipment and reduction of the number of parts |
| 描述与应用 | NPN硅外延平面晶体管的 用于扩增的低频 特性 HFE lHigh正向电流传输比。 成本可降低通过减员设备和 减少部件的数量 |