| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 20V |
| 集电极连续输出电流IC Collector Current(IC) | 600mA/0.6A |
| 基极输入电阻R1 Input Resistance(R1) | 4.7KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | |
| 电阻比(R1/R2) Resistance Ratio | |
| 直流电流增益hFE DC Current Gain(hFE) | 100 |
| 截止频率fT Transtion Frequency(fT) | 200MHz |
| 耗散功率Pc Power Dissipation | 0.15W/150mW |
| Description & Applications | Silicon NPN epitaxial planar type For muting ■ Features • Low collector-emitter saturation voltage VCE(sat) optimum for the muting circuit • The use with high current value is possible |
| 描述与应用 | NPN硅外延平面型 用于静音 ■特性 •低集电极 - 发射极饱和电压VCE 最佳的噪声抑制电路 •高电流值的使用是可能的 |