| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V/-50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V/-50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/-100mA |
| 截止频率fT Transtion Frequency(fT) | 150MHz/80MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 60 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 250mV/-250mV |
| 耗散功率Pc Power Dissipation | 125mW |
| Description & Applications | Features • Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) • Two elements incorporated into one package (transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half. |
| 描述与应用 | 特点 •NPN硅外延平面型（TR1）硅PNP外延平面型（TR2） •两个要素纳入一个包（内置电阻晶体管） •减少安装面积和汇编一半的费用。 |