请先登录
首页
购物车0

×

商品参数:

  • 型号:UPA1900TE
  • 厂家:NEC
  • 批号:05+ 05+
  • 整包数量:3000
  • 最小起批量:10
  • 标记/丝印/代码/打字:TG
  • 封装:SOT-163/SOT23-6/TSOP-6
  • 技术文档:下载

最大源漏极电压Vds Drain-Source Voltage20V
最大栅源极电压Vgs(±) Gate-Source Voltage12V
最大漏极电流Id Drain Current5.5A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.035Ω/Ohm @3A,4.5V
开启电压Vgs(th) Gate-Source Threshold Voltage0.5-1.5V
耗散功率Pd Power Dissipation200mW/0.2W
Description & ApplicationsMOS FIELD EFFECT TRANSISTOR DESCRIPTION The µPA1900 is a switching device which can be driven directly by a 2.5 V power source. The µPA1900 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be driven by a 2.5 V power source • Low on-state resistance RDS(on)1 = 35 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) RDS(on)2 = 38 mΩ MAX. (VGS = 4.0 V, ID = 3.0 A) RDS(on)3 = 45 mΩ MAX. (VGS = 2.5 V, ID = 3.0 A)
描述与应用MOS场效应晶体管 说明 μPA1900是可驱动的开关装置直接由2.5 V电源。 μPA1900具有低通态电阻和优良的开关特性,是适合于的应用,如便携机的电源开关等 •可通过2.5 V电源驱动 •低通态电阻 RDS(上)1=35mΩ最大。 (VGS=4.5 V,ID= 3.0 A) 的RDS(on)=38mΩ最大。 (VGS=4.0 V,ID= 3.0 A) 的RDS(on)=45mΩ最大。 (VGS=2.5 V,ID= 3.0 A)
规格书PDF 下载

×

在线询价:

* 来自:
寄予:
深圳市爱瑞凯电子科技有限公司
商品:
UPA1900TE
*主题:
详细内容:
*验证码: