| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -30V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -30V |
| 集电极连续输出电流IC Collector Current(IC) | -3A |
| Q1基极输入电阻R1 Input Resistance(R1) | 380MHz |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 200~560 |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | -160mV |
| Q2基极输入电阻R1 Input Resistance(R1) | 1300mW |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | Features • PNP Epitaxial Planar Silicon Transistor • Composite type with 2 PNP transistors contained in a single package, facilitating high-density mounting. • The VEC2102 consists of two chips which are equivalent to the CPH3109 encapsulated in a package. • Ultrasmall package permitting applied sets to be small and slim (mounting height : 0.75mm). Applications • Relay drivers, lamp drivers, motor drivers, flash. • DC / DC Converter Applications |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | 特点 •PNP平面外延硅晶体管 •复合型，在单一封装中包含2个PNP晶体管，促进高密度安装。 •VEC2102由两个芯片是封装在一个包中的CPH3109。 •超小封装允许应用套小而纤细（安装高度：高度仅0.75mm）。 应用 •继电器驱动器，灯驱动器，电机驱动器，闪光灯。 •DC / DC转换器应用 |
| 直流电流增益hFE DC Current Gain(hFE) | |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | |
| Description & Applications | |
| 描述与应用 | |