| Q1 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
50V |
| Q1集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
50V |
| Q1集电极连续输出电流IC Collector Current(IC) |
100MA/0.1A |
| Q2 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
-50V |
| Q2集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
-50V |
| Q2集电极连续输出电流IC Collector Current(IC) |
-0.1A/100MA |
| Q1基极输入电阻R1 Input Resistance(R1) |
22 KΩ |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
22 KΩ |
| Q1电阻比(R1/R2) Q1 Resistance Ratio |
1 |
| Q2基极输入电阻R1 Input Resistance(R1) |
22 KΩ |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
22KΩ |
| Q2电阻比(R1/R2) Q2 Resistance Ratio |
1 |
| 直流电流增益hFE DC Current Gain(hFE) Q1/Q2 |
60 / 60 |
| 截止频率fT Transtion Frequency(fT) Q1/Q2 |
150MHZ / 80MHZ |
| 耗散功率Pc Power Dissipation |
150MW/0.15W |
| Description & Applications |
Silicon NPN epitaxial planer transistor (Tr1)
Silicon PNP epitaxial planer transistor (Tr2)
Two elements incorporated into one package.
(Transistors with built-in resistor)
UNR2212 (UN2212) + UNR2112 (UN2112)
|
| 描述与应用 |
硅NPN型外延刨床晶体管(Tr1)
硅PNP型外延刨床晶体管(Tr2)
两个元素纳入一个包。
(晶体管内置电阻)
UNR2212 (UN2212) + UNR2112 (UN2112)
|