| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -40V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −40V |
| 集电极连续输出电流ICCollector Current(IC) | -750mA/-0.75A |
| 截止频率fTTranstion Frequency(fT) | 220MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 510 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -250mV/-0.25V |
| 耗散功率PcPoWer Dissipation | 385mW/0.385W |
| Description & Applications | SOT323 PNP SILICON POWER(SWITCHING) TRANSISTOR FEATURES * 500mW POWER DISSIPATION * 1A Peak Pulse Current * Excellent HFE Characteristics * Low Saturation Voltage * Low Equivalent On Resistance APPLICATIONS * Boost functions in DC-DC converters * Motor driver functions |
| 描述与应用 | SOT323 PNP硅功率（开关）晶体管 特点 *500mW的功耗 *1A峰值脉冲电流 *优秀HFE特性 *低饱和电压 *低等效电阻 应用 *升压DC-DC转换器功能 *马达驱动功能 |