| 最大源漏极电压Vds Drain-Source Voltage | 35V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 6.7A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | |
| 耗散功率Pd Power Dissipation | 2W |
| Description & Applications | 35V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 35V: RDS(on) = 0.050 : ID = 6.7A DESCRIPTION This new generation of high cell density planar MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOT23 pa |
| 描述与应用 | 35V N-沟道增强型MOSFET 摘要 V（BR）DSS =35V RDS（ON）= 0.050：ID=6.7A 说明 这种新一代的高密度平面MOSFET由Zetex采用了独特的 结构，结合低的导通电阻的开关速度快的好处。这使得他们的高效率，低电压，电源管理应用的理想选择。 •低导通电阻 •开关速度快 •低门槛 •低栅极驱动器 •SOT23封装 |