| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 190V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 70V |
| 集电极连续输出电流ICCollector Current(IC) | 10mA |
| 截止频率fTTranstion Frequency(fT) | 115MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 450 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 175mV/0.175V |
| 耗散功率PcPower Dissipation | 1.7W |
| Description & Applications | • 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR • Extremely Low Equivalent On Resistance • Extremely Low Saturation Voltage • hFEcharacterised up to 10A • IC=4A Continuous Collector Current • SOT23-6 package |
| 描述与应用 | •50V NPN硅低饱和开关晶体管 •极低的等效导通电阻 •极低的饱和电压 •hFEcharacterised的高达10A •IC= 4A的连续集电极电流 |