| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | −20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | -12V |
| 集电极连续输出电流ICCollector Current(IC) | -4A |
| 截止频率fTTranstion Frequency(fT) | 55MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 300~900 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -250mV/-0.25V |
| 耗散功率PcPoWer Dissipation | 1.1W |
| Description & Applications | PNP SILICON LOW SATURATION SWITCHING TRANSISTOR DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Low Equivalent On Resistance • Extremely Low Saturation Voltage • hFE characterised • SOT23-6 package APPLICATIONS • DC - DC Converters • Power Management Functions • Power switches • Motor control |
| 描述与应用 | 低饱和PNP硅开关晶体管 说明 这个新的第四代超低饱和晶体管采用Zetex矩阵结构，结合先进的装配技术提供极低的国家的损失。这使得高效率，低电压开关应用理想。 特点 •低等效电阻 •极低的饱和电压 •HFE特点 •SOT23-6封装 应用 •DC - DC转换器 •电源管理功能 •电源开关 •电机控制 |