| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 60±10V |
| 集电极连续输出电流ICCollector Current(IC) | 800mA/0.8A |
| 截止频率fTTranstion Frequency(fT) | |
| 直流电流增益hFEDC Current Gain(hFE) | 2000 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 1.2V |
| 耗散功率PcPower Dissipation | 1.25W |
| Description & Applications | • TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power) • Solenoid Drive Applications • Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Zener diode included between collector and base |
| 描述与应用 | •东芝晶体管NPN硅外延型（达林电源） •电磁驱动应用 •电机驱动应用 •高直流电流增益：HFE=2000（min）（VCE= 2 V，IC= 1） •包括集电极和基极之间的齐纳二极管 |