| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -50V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −50V |
| 集电极连续输出电流ICCollector Current(IC) | -2A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 200 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -390mV/-0.39V |
| 耗散功率PcPoWer Dissipation | 300mW/0.3W |
| Description & Applications | 30 V low VCE(sat) PNP transistor FEATURES • Low collector-emitter saturation voltage VCE(sat) and corresponding low RCEsat • High collector current capability • High collector current gain • Improved efficiency due to reduced heat generation. • NPN complement: PBSS4350T. APPLICATIONS • Power management applications • Low and medium power DC/DC convertors • Supply line switching • Battery chargers • Linear voltage regulation with low voltage drop-out |
| 描述与应用 | 30伏的低VCE（sat）的PNP晶体管 特点 •低集电极 - 发射极饱和电压VCE（饱和）和相应的低RCEsat •高集电极电流能力 •高集电极电流增益 •由于产生的热量减少，提高了效率。 •NPN补充：PBSS4350T。 应用 •电源管理应用 •低功率和中功率DC/ DC转换器 •供电线路开关 •电池充电器 •线性电压调节，低电压降 |