| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -70V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −60V |
| 集电极连续输出电流ICCollector Current(IC) | -50mA |
| 截止频率fTTranstion Frequency(fT) | 700MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 90~180 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率PcPoWer Dissipation | 200mW/0.2W |
| Description & Applications | PNP/NPN Epitaxial planar silicon transistors High-definition CRT Display application Features high fT； small reverse transfer capacitance |
| 描述与应用 | PNP/ NPN外延平面硅晶体管 高清晰度CRT显示器应用 特点 高截止频率; 小反向传输电容 |