| 最大源漏极电压VdsDrain-Source Voltage | 15v |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -15v |
| 漏极电流(Vgs=0V)IDSSDrain Current | 57~75ma |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | -0.2~2.5v |
| 耗散功率PdPower Dissipation | 400mW/0.4W |
| Description & Applications | •N-Channel Junction Silicon FET •High-Frequency Low-Noise Amplifier •Adoption of FBET process. •Amateur radio equipment. •UHF amplifiers, MIX, OSC, analog switches. |
| 描述与应用 | •N沟道结硅FET •高频低噪声放大器 •通过过程FBET。 •业余无线电装备。 •UHF放大器，MIX，OSC，模拟开关。 |