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商品参数:

  • 型号:TPCF8402
  • 厂家:TOSHIBA
  • 批号:05+ROHS 05+NOPB
  • 整包数量:4000
  • 最小起批量:10
  • 标记/丝印/代码/打字:f6b
  • 封装:1206-8/vs-8/SOT23-8
  • 技术文档:下载

最大源漏极电压VdsDrain-Source Voltage30V/-30V
最大栅源极电压Vgs(±)Gate-Source Voltage20V/20V
最大漏极电流IdDrain Current4A/-3.2A
源漏极导通电阻RdsDrain-Source On-State Resistance72mΩ@ VGS = -10V, ID = -1600mA
开启电压Vgs(th)Gate-Source Threshold Voltage-0.8~-2.0V
耗散功率PdPower Dissipation530mW/0.53W
Description & ApplicationsTOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) Portable Equipment Applications Motor Drive Applications DC-DC Converter Applications • Low drain-source ON resistance : P Channel RDS (ON) = 60 mΩ (typ.) N Channel RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance : P Channel |Yfs| = 5.9 S (typ.) N Channel |Yfs| = 6.8 S (typ.) • Low leakage current : P Channel IDSS = −10 μA (VDS = −30 V) N Channel IDSS = 10 μA (VDS = 30 V) • Enhancement-mode : P Channel Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1mA) N Channel Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA)
描述与应用东芝场效应晶体管的硅P,N沟道MOS型(U-MOS IV/ U-MOS III) 便携式设备的应用 电机驱动应用 DC-DC转换器应用 •低漏源导通电阻:P通道的RDS(ON)= 60mΩ(典型值) N沟道的RDS(ON)=38mΩ(典型值) •高正向转移导纳:P通道| YFS|= 5.9 S(典型值) N沟道YFS| =6.8 S(典型值) •低漏电流:P沟道IDSS= -10μA(VDS=-30 V) N沟道IDSS=10μA(VDS=30 V) •增强模式 :P沟道Vth= -0.8到-2.0 V(VDS= -10 V,ID=-1MA) N沟道Vth =1.3〜2.5 V(VDS=10V,ID=1毫安)
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深圳市爱瑞凯电子科技有限公司
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TPCF8402
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