| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 40V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 32V |
| 集电极连续输出电流ICCollector Current(IC) | 500mA/0.5A |
| 截止频率fTTranstion Frequency(fT) | 200MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 70~240 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 200mV/0.2V |
| 耗散功率PcPower Dissipation | 200mW/0.2W |
| Description & Applications | Features • PNP Silicon Transistor • Large collector current : ICMax=-500mA • Suitable for low-Voltage operation because of its low saturation voltage • Complementary pair with STC2411 Description • Medium power amplifier |
| 描述与应用 | 特点 •PNP硅晶体管集电极大电流：ICMAX=500毫安 •适用于低电压操作，因为它的低饱和电压 •互补配对STC2411 描述 •中等功率放大器 |