| 最大源漏极电压Vds Drain-Source Voltage | 240V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 1.04A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 3.9Ω/Ohm 260mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.2V |
| 耗散功率Pd Power Dissipation | 1A |
| Description & Applications | SIPMOSSmall-Signal-Transistor N-Channel Enhancement mode, Logic Level dv/dt rated Pb-free lead plating; RoHS compliant |
| 描述与应用 | SIPMOS小信号晶体管 N沟道 增强模式，逻辑电平 dv / dt的额定 无铅引脚电镀，符合RoHS标准 |