| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | −80V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −65V |
| 集电极连续输出电流ICCollector Current(IC) | −100mA/-0.1A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 220~475 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -300mV/-0.3V |
| 耗散功率PcPoWer Dissipation | 265mW/0.265W |
| Description & Applications | General Purpose Transistor PNP Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT−723 which is designed for low power surface mount applications. • This is a Pb−Free Device |
| 描述与应用 | 通用晶体管 PNP硅 这种晶体管是专为通用放大器应用。它被安置在SOT-723是专为低功率表面贴装应用。 •这是一个Pb-Free设备 |