| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V/-50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V/-50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/-100mA |
| Q1基极输入电阻R1 Input Resistance(R1) | 1KΩ/Ohm |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 10KΩ/Ohm |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | 0.1 |
| Q2基极输入电阻R1 Input Resistance(R1) | 10KΩ/Ohm |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 10KΩ/Ohm |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | 1 |
| 直流电流增益hFE DC Current Gain(hFE) | |
| 截止频率fT Transtion Frequency(fT) | 200MHz |
| 耗散功率Pc Power Dissipation | 200mW/0.2W |
| Description & Applications | Features •EPITAXIAL PLANAR PNP TRANSISTOR •INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. •Including two devices in TES6. •With Built-in Bias Resistors. •Simplify Circuit Design. •Reduce a Quantity of Parts and Manufacturing Process. |
| 描述与应用 | 特点 •外延平面PNP晶体管 •接口电路和驱动器电路中的应用 •在TES6包括两个设备 •内置偏置电阻器 •简化电路设计 •减少了部件数量和制造工艺 |