| 最大源漏极电压VdsDrain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | 490mA/0.49A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 1.4Ω@ VGS =4.5V, ID =75mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 1V |
| 耗散功率PdPower Dissipation | 990mW/0.99W |
| Description & Applications | Dual N-channel Trench MOS standard level FET Description Dual N-channel enhancement mode field-effect transistor in a plastic package using Trench MOS technology. Features Surface mounted package Footprint 40% smaller than SOT23 Standard level threshold voltage Fast switching Low on-state resistance Dual device. Applications Driver circuits Switching in portable appliances |
| 描述与应用 | 双N沟道的海沟MOS标准水平FET 描述 双N沟道增强型场效应晶体管在一个塑料包装用 沟槽MOS的技术。 特点 表面贴装封装 底印比SOT23小40％ 标准电平阈值电压 快速开关 低通态电阻 双设备。 应用 驱动电路 在便携式电器开关 |