| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 80V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 80V |
| 集电极连续输出电流ICCollector Current(IC) | 2A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 300 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率PcPower Dissipation | 1W |
| Description & Applications | NPN EPITAXIAL PLANAR TRANSISTOR The HM3669 is designed for using in power amplifier applications, power switching application. |
| 描述与应用 | NPN外延平面晶体管 HM3669是专为使用功率放大器应用， 电源开关应用。 |